1300 nm Wavelength InAs Quantum Dot Photodetector Grown on Silicon

Wavelength agile superlattice quantum dot infrared photodetector

A dual-band superlattice quantum dot infrared photodetector, providing bias-selectability of the response peaks, is demonstrated. The active region consists of two quantum dot superlattices separated by a graded barrier, enabling photocurrent generation only in one superlattice for a given bias polarity. Two response bands, one consisting of three peaks at 2.9, 3.2, and 4.9 m and the other cons...

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

Direct integration of III–V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III–V materials and ...

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Silicon Substrates

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Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates.

We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically grown on silicon substrates. A high-crystalline quality GaAs-on-Si template was achieved by aspect ratio trapping together with the combined effects of cyclic thermal annealing and strain-balancing layer stacks. An ultra-low dark current of 0.8 nA and an internal responsivity of 0.9 A/W were measured in the O ba...